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| SN 7002 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Pin 2 S Pin 3 D Type SN 7002 Type SN 7002 VDS 60 V ID 0.19 A RDS(on) 5 Package SOT-23 Marking sSG Ordering Code Q67000-S063 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 60 60 Unit V VDS VDGR VGS Vgs ID RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current 14 20 A 0.19 TA = 25 C DC drain current, pulsed IDpuls 0.76 TA = 25 C Power dissipation Ptot 0.36 W TA = 25 C Semiconductor Group 1 Sep-13-1996 SN 7002 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 350 285 E 55 / 150 / 56 Unit C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.1 1 2 3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 5 A VDS = 60 V, VGS = 0 V, Tj = 25 C VDS = 60 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 10 nA 5 7.5 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.05 A Semiconductor Group 2 Sep-13-1996 SN 7002 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.1 0.2 60 15 15 - S pF 80 25 25 ns 5 8 VDS 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Rise time tr 5 8 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Turn-off delay time td(off) 12 16 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Fall time tf 13 17 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Semiconductor Group 3 Sep-13-1996 SN 7002 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1 0.19 0.76 V 1.2 Values typ. max. Unit TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.5 A, Tj = 25 C Semiconductor Group 4 Sep-13-1996 SN 7002 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.20 A 0.40 W Ptot 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 C 160 ID 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 71 V 68 66 V(BR)DSS 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 Sep-13-1996 SN 7002 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.45 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 16 Ptot = 0W b k i hg f jl e VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 RDS (on) 12 ca ID 0.35 0.30 d d e f g 10 0.25 0.20 0.15 0.10 0.05 0.00 a 8 c h i j k l 6 d e f lk g h ij c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 4 2 VGS [V] = a 2.0 b 2.5 0 V 5.0 0.00 0.04 0.08 0.12 0.16 A b k l 9.0 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.24 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 1.1 A 0.40 S ID 0.9 0.8 0.7 0.6 gfs 0.30 0.25 0.20 0.5 0.4 0.3 0.2 0.05 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1.0 0.15 0.10 VGS ID Semiconductor Group 6 Sep-13-1996 SN 7002 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.5 A, VGS = 10 V 16 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 12 VGS(th) 3.6 3.2 10 2.8 2.4 8 98% 98% 2.0 1.6 1.2 6 typ 4 typ 2 2% 0.8 0.4 0 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 0 pF C 10 2 A IF 10 -1 Ciss 10 1 Coss 10 -2 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -3 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-13-1996 SN 7002 Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 Sep-13-1996 |
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